Semiconductor Science and Technology latest papers http://stacks.iop.org/0268-1242 Essential reading for all those involved in semiconductor research and applications. SST covers properties of bulk, low-dimensional and amorphous semiconductors, computational semiconductor physics, crystal growth and preparation of materials, layer and device properties, electronic and optoelectronic devices, technology including lithography, materials and device reliability, among others. en-gb Copyright © IOP Publishing 2009 Thu, 01 Jan 1970 00:00:00 GMT Thu, 01 Jan 1970 00:00:00 GMT http://syndication.iop.org/about/ custserv@iop.org (Customer Services) Semiconductor Science and Technology http://images.iop.org/website-logos/ejs_logo.png http://stacks.iop.org/ Electronic structure properties of the In(Ga)As/GaAs quantum dot–quantum well tunnel-injection system http://stacks.iop.org/0268-1242/24/i=8/a=085011?rss=2.0 Author(s): Grzegorz Sek, Janusz Andrzejewski, Krzysztof Ryczko, Przemyslaw Poloczek, Jan Misiewicz, Elizaveta S Semenova, Aristide Lemaitre, Gilles Patriarche and Aberrahim Ramdane<br>Affiliation(s): Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland; Laboratoire de Photonique et de Nanostrucures, Centre National de la Recherche Scientifique, Route de Nozay, F-91460 Marcoussis, France Thu, 02 Jul 2009 23:00:00 GMT Very low hysteresis organic thin-film transistors http://stacks.iop.org/0268-1242/24/i=8/a=085009?rss=2.0 Author(s): Chunhong Li, Feng Pan, Feng Zhu, De Song, He Wang and Donghang Yan<br>Affiliation(s): State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022, People's Republic of China Thu, 02 Jul 2009 23:00:00 GMT Efficiency improvement of single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process http://stacks.iop.org/0268-1242/24/i=8/a=085007?rss=2.0 Author(s): Yi-An Chang, Zhen-Yu Li, Hao-Chung Kuo, Tien-Chang Lu, Su-Fan Yang, Li-Wen Lai, Li-Hong Lai and Shing-Chung Wang<br>Affiliation(s): Millennium Communication Co., Ltd, Hsinchu Industrial Park, 303, Taiwan; Department of Photonics & Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, 300, Taiwan Thu, 02 Jul 2009 23:00:00 GMT Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography http://stacks.iop.org/0268-1242/24/i=8/a=085008?rss=2.0 Author(s): H W Huang, C H Lin, K Y Lee, C C Yu, J K Huang, B D Lee, H C Kuo, K M Leung and S C Wang<br>Affiliation(s): Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China; Luxtaltek Corporation, Chunan, Miaoli 350, Taiwan, Republic of China; Department of Computer and Information Science, Polytechnic Institute, New York University, Six Metrotech Center, Brooklyn, NY 11201, USA Thu, 02 Jul 2009 23:00:00 GMT Charge trapping and reliability characteristics of sputtered Y2O3 high-k dielectrics on N- and S-passivated germanium http://stacks.iop.org/0268-1242/24/i=8/a=085006?rss=2.0 Author(s): C Mahata, M K Bera, T Das, S Mallik, M K Hota, B Majhi, S Verma, P K Bose and C K Maiti<br>Affiliation(s): Department of Electronics and ECE, Indian Institute of Technology, Kharagpur 721302, India; Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan; Institute of Physics, Bhubaneswar 751005, India; Mechanical Engineering Departments, Jadavpur University, Jadavpur, Kolkata 700032, India Thu, 02 Jul 2009 23:00:00 GMT A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation http://stacks.iop.org/0268-1242/24/i=8/a=085010?rss=2.0 Author(s): M Debbichi, S Ridene, H Bouchriha, A Ben Fredj, M Said, J-L Lazzari, Y Cuminal and P Christol<br>Affiliation(s): Unite de Recherche de Physique des Solides, Departement de Physique, Faculte des Sciences de Monastir, 5019 Monastir, Tunisia; Unite de Recherche de Physique Quantique et Photonique, Departement de Physique, Faculte des Sciences de Tunis, Universite de Tunis El Manar, Campus Universitaire, 1060 Tunis, Tunisia; Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UPR-CNRS 3118 associee a Aix-Marseille Universite, Case 913, Campus de Luminy, 13288 Marseille cedex 9, France; Institut d'Electronique du Sud (IES), UMR CNRS 5214, Case 067, Universite Montpellier 2, 34095 Montpellier cedex 05, France Thu, 02 Jul 2009 23:00:00 GMT Detection of a shallow level in a semiconductor by admittance spectroscopy http://stacks.iop.org/0268-1242/24/i=8/a=085004?rss=2.0 Author(s): Hao Yuan, Hongyun Zhang and Fang Lu<br>Affiliation(s): Surface Physics Laboratory, Laboratory of Advanced Materials, Fudan University, Shanghai, People's Republic of China Mon, 29 Jun 2009 23:00:00 GMT Scanning transmission electron microscopy determination of critical InAs QD parameters from high-quality focused ion beam lamellas http://stacks.iop.org/0268-1242/24/i=8/a=085001?rss=2.0 Author(s): A Taurino, M Catalano, M Lomascolo, A Persano, A Convertino and L Cerri<br>Affiliation(s): Institute for Microelectronics and Microsystems, Italian National Research Council (CNR-IMM)--Lecce Section, via Monteroni, 73100 Lecce, Italy; Institute for the Study of Nanostructured Materials, Italian National Research Council (CNR-ISMN)--Montelibretti Section, via Salaria Km. 29.300, 00016 Roma, Italy Mon, 29 Jun 2009 23:00:00 GMT Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions http://stacks.iop.org/0268-1242/24/i=8/a=085005?rss=2.0 Author(s): Feng Liu, Lining Zhang, Jian Zhang, Jin He and Mansun Chan<br>Affiliation(s): TSRC, Key Laboratory of Microelectronic Devices and Circuits of the Ministry of Education of China, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, People's Republic of China; Department of Electronic and Computer Engineering, Hong Kong University of Science & Technology, Clearwater Bay, Kowloon, Hong Kong, People's Republic of China; Micro & Nano Electronic Device and Integrated Technology Group, The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055, People's Republic of China Mon, 29 Jun 2009 23:00:00 GMT Transport and performance of a gate all around InAs nanowire transistor http://stacks.iop.org/0268-1242/24/i=8/a=085003?rss=2.0 Author(s): Khairul Alam<br>Affiliation(s): Department of Electrical and Electronic Engineering, East West University, Dhaka-1212, Bangladesh Mon, 29 Jun 2009 23:00:00 GMT Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process http://stacks.iop.org/0268-1242/24/i=8/a=085002?rss=2.0 Author(s): A J Flewitt, J D Dutson, P Beecher, D Paul, S J Wakeham, M E Vickers, C Ducati, S P Speakman, W I Milne and M J Thwaites<br>Affiliation(s): Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge, CB3 0FA, UK; Plasma Quest Ltd., Unit 1B, Rose Estate, Osborn Way, Hook, Hampshire, RG27 9UT, UK; Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge, CB2 3QZ, UK; 3T Technologies Ltd, 7, Chapel Drive, Little Waltham, Chelmsford, Essex, CM3 3LW, UK Mon, 29 Jun 2009 23:00:00 GMT