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<title>Semiconductor Science and Technology latest papers</title>
<link>http://stacks.iop.org/0268-1242</link>
<description>Essential reading for all those involved in semiconductor research and applications. SST covers properties of bulk, low-dimensional and amorphous semiconductors, computational semiconductor physics, crystal growth and preparation of materials, layer and device properties, electronic and optoelectronic devices, technology including lithography, materials and device reliability, among others.</description>
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<copyright>Copyright &#169; IOP Publishing 2011</copyright>
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<title>A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage</title>
<link>http://stacks.iop.org/0268-1242/26/i=9/a=095005?rss=2.0</link>
<description>Author(s): S E Jamali Mahabadi, Ali A Orouji, P Keshavarzi and Hamid Amini Moghadam&lt;br&gt;Affiliation(s): Electrical Engineering Department, Semnan University, Semnan, Iran</description>
<pubDate>Tue, 05 Jul 2011 23:00:00 GMT</pubDate>
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<title>Resonance Coulomb scattering by shallow donor impurities in GaAs and InP</title>
<link>http://stacks.iop.org/0268-1242/26/i=9/a=095003?rss=2.0</link>
<description>Author(s): V Ya Aleshkin and D I Burdeiny&lt;br&gt;Affiliation(s): Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, 603950, Russia</description>
<pubDate>Tue, 05 Jul 2011 23:00:00 GMT</pubDate>
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<title>Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading</title>
<link>http://stacks.iop.org/0268-1242/26/i=9/a=095007?rss=2.0</link>
<description>Author(s): Ya Ya Kudryk and A V Zinovchuk&lt;br&gt;Affiliation(s): V. Lashkaryov Institute of Semiconductor Physics, 03028 Kyiv, Ukraine; Ivan Franko Zhytomyr State University, 10008 Zhytomyr, Ukraine</description>
<pubDate>Tue, 05 Jul 2011 23:00:00 GMT</pubDate>
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<title>Optoelectronic and thermal characteristics of GaN-based monolithic light emitting diode arrays</title>
<link>http://stacks.iop.org/0268-1242/26/i=9/a=095006?rss=2.0</link>
<description>Author(s): Hee Kwan Lee and Jae Su Yu&lt;br&gt;Affiliation(s): Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Korea</description>
<pubDate>Tue, 05 Jul 2011 23:00:00 GMT</pubDate>
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<title>Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers</title>
<link>http://stacks.iop.org/0268-1242/26/i=9/a=095004?rss=2.0</link>
<description>Author(s): Haifeng Pu, Guifeng Li, Jiahan Feng, Baoying Liu and Qun Zhang&lt;br&gt;Affiliation(s): Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China</description>
<pubDate>Tue, 05 Jul 2011 23:00:00 GMT</pubDate>
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<title>Variable-range hopping conduction and metal&#8211;insulator transition in amorphous RexSi1&#8722;x thin films</title>
<link>http://stacks.iop.org/0268-1242/26/i=9/a=095001?rss=2.0</link>
<description>Author(s): K G Lisunov, H Vinzelberg, E Arushanov and J Schumann&lt;br&gt;Affiliation(s): Institute of Applied Physics, Academy of Sciences of Moldova, 277028 Chisinau, Moldova; Leibniz-Institut fur Festkorper- und Werkstoffforschung Dresden - IFW Dresden, Helmholtzstr.20, D-01069 Dresden, Germany</description>
<pubDate>Tue, 05 Jul 2011 23:00:00 GMT</pubDate>
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<title>Fabrication and theoretical analysis of GaN-based vertical light-emitting diodes with SiO2 current blocking layer</title>
<link>http://stacks.iop.org/0268-1242/26/i=9/a=095008?rss=2.0</link>
<description>Author(s): Seong-Ju Bae, JeHyuk Choi, Dong-Hyun Kim, In-Chan Ju, Chan-Soo Shin, Chul-Gi Ko and Jae-Su Yu&lt;br&gt;Affiliation(s): Technology Development Department, Korea Advanced Nano Fab Center (KANC), 906-10 Iui-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea; Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Korea</description>
<pubDate>Tue, 05 Jul 2011 23:00:00 GMT</pubDate>
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<title>Variable wavelength photocurrent mapping on PbS quantum dot: fullerene thin films by conductive atomic force microscopy</title>
<link>http://stacks.iop.org/0268-1242/26/i=9/a=095002?rss=2.0</link>
<description>Author(s): M Madl, W Brezna, B Basnar, M Yarema, W Heiss and J Smoliner&lt;br&gt;Affiliation(s): Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, 1410 Vienna, Austria; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergstr 69, 4040 Linz, Austria</description>
<pubDate>Tue, 05 Jul 2011 23:00:00 GMT</pubDate>
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<item>
<title>Enhanced photocatalytic activity of mesoporous S-N-codoped TiO2 loaded with Ag nanoparticles</title>
<link>http://stacks.iop.org/0268-1242/26/i=8/a=085037?rss=2.0</link>
<description>Author(s): Yi Xie, Jongmin Kum, Xiujian Zhao and Sung Oh Cho&lt;br&gt;Affiliation(s): State Key Laboratory of Silicate Materials for Architectures (Wuhan University of Technology), Wuhan, Hubei, 430070, People's Republic of China; Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong, Yuseong, Daejeon 305-701, Korea</description>
<pubDate>Mon, 27 Jun 2011 23:00:00 GMT</pubDate>
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<title>Theoretical investigation of a surface-emitting superluminescent diode with a circular grating</title>
<link>http://stacks.iop.org/0268-1242/26/i=8/a=085036?rss=2.0</link>
<description>Author(s): Qi An, Jiandong Lin, Peng Jin and Zhanguo Wang&lt;br&gt;Affiliation(s): Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China</description>
<pubDate>Mon, 27 Jun 2011 23:00:00 GMT</pubDate>
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