Semiconductor Science and Technology latest papers http://stacks.iop.org/0268-1242 Essential reading for all those involved in semiconductor research and applications. SST covers properties of bulk, low-dimensional and amorphous semiconductors, computational semiconductor physics, crystal growth and preparation of materials, layer and device properties, electronic and optoelectronic devices, technology including lithography, materials and device reliability, among others. en-gb Copyright © IOP Publishing 2009 Thu, 01 Jan 1970 00:00:00 GMT Thu, 01 Jan 1970 00:00:00 GMT http://syndication.iop.org/about/ custserv@iop.org (Customer Services) Semiconductor Science and Technology http://images.iop.org/website-logos/ejs_logo.png http://stacks.iop.org/ Integrated twin modulator switches through MMI splitting and electroabsorption modulation http://stacks.iop.org/0268-1242/24/i=12/a=125004?rss=2.0 Author(s): S Y Lee, H Yang, Y C Li, C W Lee and T Mei<br>Affiliation(s): School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore; Tyndall National Institute, Cork, Republic of Ireland; Data Storage Institute (DSI), Singapore Fri, 13 Nov 2009 00:00:00 GMT Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance–voltage measurements and simulations http://stacks.iop.org/0268-1242/24/i=12/a=125005?rss=2.0 Author(s): Yeong-Deuk Jo, Jung-Hyuk Koh, Jae-Geun Ha, Ji-Hong Kim, Dae-Hyung Cho, Byung-Moo Moon and Sang-Mo Koo<br>Affiliation(s): Department of Electronic Materials, Kwangwoon University, Seoul 139-701 Korea; Department of Electrical Engineering, Korea University, Seoul 136-701 Korea Fri, 13 Nov 2009 00:00:00 GMT Dislocations and strain relief in reverse-graded semiconductor layers http://stacks.iop.org/0268-1242/24/i=12/a=125006?rss=2.0 Author(s): B Bertoli, E N Suarez, F C Jain and J E Ayers<br>Affiliation(s): Electrical and Computer Engineering Department, University of Connecticut, Storrs, CT 06269-2157, USA Fri, 13 Nov 2009 00:00:00 GMT Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction http://stacks.iop.org/0268-1242/24/i=12/a=125007?rss=2.0 Author(s): J Q Liu, J F Wang, Y X Qiu, X Guo, K Huang, Y M Zhang, X J Hu, Y Xu, K Xu, X H Huang and H Yang<br>Affiliation(s): Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215125 Suzhou, People's Republic of China; Institute of Semiconductors, Chinese Academy of Sciences, 10083 Beijing, People's Republic of China; Graduate University of Chinese Academy of Sciences, 100049 Beijing, People's Republic of China Fri, 13 Nov 2009 00:00:00 GMT Radiative defect state identification in semi-insulating GaAs using photo-carrier Radiometry http://stacks.iop.org/0268-1242/24/i=12/a=125002?rss=2.0 Author(s): Jun Xia and Andreas Mandelis<br>Affiliation(s): Department of Mechanical and Industrial Engineering, Center for Advanced Diffusion-Wave Technologies (CADIFT), University of Toronto, Toronto, Ontario M5S3G8, Canada Tue, 03 Nov 2009 00:00:00 GMT Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack http://stacks.iop.org/0268-1242/24/i=12/a=125001?rss=2.0 Author(s): A Tsormpatzoglou, D H Tassis, C A Dimitriadis, M Mouis, G Ghibaudo and N Collaert<br>Affiliation(s): Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece; IMEP, MINATEC, Parvis Louis Neel, 38054 Grenoble Cedex 9, France; IMEC, Kapeldreef 75, 3001 Leuven, Belgium Tue, 03 Nov 2009 00:00:00 GMT Performance improvement of InGaN/GaN light-emitting diodes with triangular- shaped multiple quantum wells http://stacks.iop.org/0268-1242/24/i=12/a=125003?rss=2.0 Author(s): Li-Hong Zhu, Qing-Hong Zheng and Bao-Lin Liu<br>Affiliation(s): Department of Physics, Xiamen University, Xiamen 361005, People's Republic China Tue, 03 Nov 2009 00:00:00 GMT Improved charge storage characteristics of the tetralayer non-volatile memory structure using nickel nanocrystal trapping layer http://stacks.iop.org/0268-1242/24/i=11/a=115020?rss=2.0 Author(s): Debashis Panda, Achintya Dhar and Samit K Ray<br>Affiliation(s): Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur; Kharagpur-721 302, West Bengal, India Tue, 27 Oct 2009 00:00:00 GMT Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma- assisted molecular beam epitaxy http://stacks.iop.org/0268-1242/24/i=11/a=115019?rss=2.0 Author(s): E Alarcon-Llado, J Ibanez, R Cusco, L Artus, S V Novikov and C T Foxon<br>Affiliation(s): Institut Jaume Almera, Consell Superior d'Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., 08028 Barcelona, Catalonia, Spain; School of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham, UK Tue, 27 Oct 2009 00:00:00 GMT Electrical characteristics dependence on the channel fin aspect ratio of multi-fin field effect transistors http://stacks.iop.org/0268-1242/24/i=11/a=115021?rss=2.0 Author(s): Hui-Wen Cheng and Yiming Li<br>Affiliation(s): Institute of Communication Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan; Department of Electrical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan; National Nano Device Laboratories, Hsinchu 300, Taiwan Tue, 27 Oct 2009 00:00:00 GMT